Thermal Management Diamond
Diamond offers the highest known thermal conductivity (up to 2200 W/m·K at room temperature), enabling lower junction temperature, higher power density, improved reliability, and extended lifetime for high-power and high-density devices.
Single-Crystal Diamond Substrates
Ultra-high thermal conductivity substrates with excellent surface quality, compatible with GaN, SiC and Si platforms.
Core Points
Series 01Core Parameters
| Growth method | MPCVD |
|---|---|
| Thermal conductivity @300K | Up to 2200 W/m·K |
| Thermal expansion coefficient | 1.1 ppm/K |
| Hardness | ~80 GPa |
| Density | 3.52 g/cm³ |
| Dimensions | 5×5 / 10×10 / 15×15 mm² |
| Thickness | 0.1–1 mm |
| Surface roughness | Ra ~ 1 nm |
| Typical TTV | ≤ 10 μm |
| Metallization options | Ti/Pt/Au · Cr/Ni/Au (patterned & through-holes available) |
Polycrystalline Diamond Wafers
Wafer-level polycrystalline diamond for large-format integration: RF/5G & 6G, high-power GaN/SiC modules, lasers, and photonics.
Core Points
Series 02Core Parameters
| Growth method | MPCVD |
|---|---|
| Thermal conductivity @300K | 1500–1800 W/m·K |
| Thermal expansion coefficient | 1.1 ppm/K |
| Hardness | ~81 GPa |
| Density | 3.52 g/cm³ |
| Wafer size | Ø 50–100 mm |
| Thickness | 0.05/ 0.1/ 0.3 / 0.38 / 0.5 mm |
| Surface roughness | Ra ~ 5 nm |
| Typical TTV | ≤ 20 μm |
High-Performance Diamond Thermal Solution
“Illustrated here as an example”： Metallized single-crystal diamond bonded to a copper base for exceptional heat dissipation and stable, device-ready integration.
Core Points
Series 03Core Parameters
| Structure | Metallized single-crystal diamond + copper base |
|---|---|
| Purpose | High-efficiency heat spreading and thermal stability |
| Integration | Designed for seamless integration with customer devices |
| Use cases | Optoelectronic component aging tests · high-precision applications |
Diamond–Copper Composite Heat Spreaders
Diamond/Cu composites combine diamond thermal performance with copper conductivity and machinability, enabling custom shapes and large dimensions.
Core Points
Series 04Core Parameters
| Diamond–Copper (63% diamond) | k > 550 W/m·K (max > 700) · CTE 6–8 ppm/K · Flexural > 300 MPa |
|---|---|
| Electrical conductivity | IACS 20% |
| Thermal shock | −65°C to +150°C, 200 cycles |
| Thermal degradation | < 5% (final conductivity > 600 W/m·K) |
| Surface roughness | < 1 μm |
| Available dimensions | 2×2 mm² to 400×400 mm² |
| Plating options | Ni (4 μm) / Au (> 1.3 μm) |
| Customization | Custom shapes, cavities, high-precision machining |
Discuss Your Requirement
Contact us to define the optimal thermal management diamond solution for your device platform.